Product Summary

The IRLML6401TRPBF is a HEXFET power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industrys smallest footprint.

Parametrics

IRLML6401TRPBF absolute maximum ratings: (1)continuous drain current: -4.3A; (2)pulsed drain current: -34A; (3)power dissipation: 1.3W; (4)single pulse avalanche energy: 33mJ; (5)junction and storage temperature range: -55 to 150℃.

Features

IRLML6401TRPBF features: (1)Ultra Low On-Resistance; (2)P-Channel MOSFET; (3)SOT-23 Footprint; (4)Low Profile (<1.1mm); (5)Available in Tape and Reel; (6)Fast Switching; (7)1.8V Gate Rated; (8)Lead-Free; (9)Halogen-Free.

Diagrams

IRLML6401TRPBF block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRLML6401TRPBF
IRLML6401TRPBF
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MOSFET MOSFT P-Ch -4.3A 50mOhm 10nC Log Lvl
Data Sheet
0-1: $0.31
1-25: $0.17
25-100: $0.11
100-250: $0.10
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