Product Summary
The TOSHIBA TLP521-2 consist of a photo-transistor
optically coupled to a gallium arse nide infrared emitting diode.
The TLP521-2 offers two isolated channels in an eight lead plastic DIP package.
Parametrics
(1) Collector-emitter voltage: 55 V (min) ;
(2) Current transfer ratio: 50% (min) ; Rank GB: 100% (min) ;
(3) Isolation voltage: 2500 Vrms (min) ;
(4) UL recognized ;
made in Japan: UL1577, file No. E67349 ;
made in Thailand: UL1577, file No. E152349
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||
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![]() TLP521-2 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() TLP521-2GB |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() TLP521-2(GBLF5,F,T |
![]() Toshiba |
![]() Transistor Output Optocouplers VCEO 55V Vrms 2500 IF 16mA VCE 5V |
![]() Data Sheet |
![]() Negotiable |
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