Product Summary
The KDS226-RTK/P is a silicon epitaxial planar diode.
Parametrics
KDS226-RTK/P absolute maximum ratings: (1)Maximun(Peak)Reverse Voltage,Vrm:85V; (2)Reverse Voltage,Vr: 80V; (3)Maximum(Peak)Forward Current,Ifm: 300mA; (4)Average Forward Current,Io: 100mA; (5)Surge Current(10ms),Ifsm: 2A; (6)Power Dissipation,Pd:150mW; (7)Junction Temperature,Tj: 150°C; (8)Storage Temperature Range,Tstg:-55 to 150°C.
Features
KDS226-RTK/P features: (1)Small Package : SOT23; (2)Low Forward Voltage : Vf=0.9V(Typ.); (3)Fast Reverse Recovery Time : Trr=1.6ns(Typ.); (4)Small Total Capacitance: Ct=0.9pF(Typ.).
Diagrams
KDS20TN25 |
DISPENSE TIP .024" PINK 25PC |
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KDS22TN25 |
DISPENSE TIP .019" BLUE 25PC |
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KDS2572 |
Other |
Data Sheet |
Negotiable |
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