(Hong Kong)
Product Summary
The MRF136 is a power field-effect transistor.
Parametrics
MRF136 absolute maximum ratings: (1)drain-source voltage: 65V; (2)drain-gate voltage: 65V; (3)gate-source voltage: ±40V; (4)drain current-continuous: 2.5A; (5)total device dissipation: 55W; (6)storage temperature range: -65 to 150℃; (7)operating junction temperature: 200℃.
Features
MRF136 features: (1)Guaranteed 28 volt, 150 MHz performance :Output power = 15 watts ; Narrowband gain = 16 dB (Typ.) ;Efficiency = 60% (Typ.) ; (2)Small– and large–signal characterization ; (3)100% tested for load mismatch at all phase angles with 30:1 VSWR ; (4)Excellent thermal stability, ideally suited for Cass A operation ; (5)Facilitates manual gain control, ALC and modulation techniques.
Diagrams
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 MRF136Y |
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MRF136 |
M/A-COM Technology Solutions |
Transistors RF MOSFET Power 5-400MHz 15Watts 28Volt Gain 16dB |
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