(Hong Kong)
Product Summary
The FQA19N20 is an N-channel MOSFET.The FQA19N20 is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQA19N20 is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Parametrics
FQA19N20 absolute maximum ratings: (1)VDSS Drain-Source Voltage: 200 V; (2)IDM Drain Current - Pulsed: 87.2 A; (3)VGSS Gate-Source Voltage: ± 30 V; (4)EAS Single Pulsed Avalanche Energy: 433 mJ; (5)IAR Avalanche Current: 21.8 A; (6)EAR Repetitive Avalanche Energy: 18.0 mJ; (7)dv/dt Peak Diode Recovery dv/dt: 5.5 V/ns.
Features
FQA19N20 features: (1)21.8A, 200V, RDS(on) = 0.17Ω@VGS = 10 V; (2)Low gate charge ( typical 40.5 nC); (3)Low Crss ( typical 85 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FQA19N20 |
Fairchild Semiconductor |
MOSFET |
Data Sheet |
Negotiable |
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|
FQA19N20C |
Fairchild Semiconductor |
MOSFET 200V N-Channel Advance Q-FET |
Data Sheet |
Negotiable |
|
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|
FQA19N20L |
Fairchild Semiconductor |
MOSFET 200V N-Ch QFET Logic Level |
Data Sheet |
Negotiable |
|
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