(Hong Kong)
Product Summary
The MRF141G is an RF power FET.
Parametrics
MRF141G absolute maximum ratings: (1)drain-source voltage: 65V; (2)drain-gate voltage: 65V; (3)gate-source voltage: ±40V; (4)drain current: 32A; (5)storage temperature: -65 to 150℃; (6)operating junction temperature: 200℃.
Features
MRF141G features: (1)Guaranteed performance at 175MHz, 28V: Output power: 300W ;Gain: 12dB (14dB Typ.) ;Efficiency: 50% ; (2)Low thermal resistance: 0.35°C/W ; (3)Ruggedness tested at rated output power ; (4)Nitride passivated die for enhanced reliability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 MRF141G |
M/A-COM Technology Solutions |
Transistors RF MOSFET Power 5-175MHz 300Watts 28Volt Gain 12dB |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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MRF1.6/5.6 |
Other |
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Data Sheet |
Negotiable |
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MRF1.6/5.6-AP-2.5C |
Hirose Connector |
RF Connectors Obsolete |
Data Sheet |
Negotiable |
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MRF1.6/5.6-AP-59U |
Hirose Connector |
RF Connectors Obsolete |
Data Sheet |
Negotiable |
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MRF1.6/5.6-BCUPA |
Hirose Connector |
RF Connectors Obsolete |
Data Sheet |
Negotiable |
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MRF1.6/5.6-LPJ-179U |
Hirose Connector |
RF Connectors Obsolete |
Data Sheet |
Negotiable |
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MRF1.6/5.6-LR-PC-1 |
Hirose Connector |
RF Connectors Obsolete |
Data Sheet |
Negotiable |
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