(Hong Kong)
Product Summary
The NDS8435A is an enhancement mode power field effect transistor. It is produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Parametrics
NDS8435A absolute maximum ratings: drain-source voltage: -30V; (2)gate-source voltage: ±20V; (3)drain current: -7.9A; (4)maximum power dissipation: 2.5W; (5)operating and storage temperature range: -55 to 150℃.
Features
NDS8435A features: (1)-7.9 A, -30 V. RDS(ON)= 0.023 W @ VGS= -10 V;RDS(ON)= 0.035 W @ VGS= -4.5V.; (2)High density cell design for extremely low RDS(ON).; (3)High power and current handling capability in a widely used surface mount package.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 NDS8435A |
Fairchild Semiconductor |
MOSFET Single P-Ch FET Enhancement Mode |
Data Sheet |
Negotiable |
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NDS8435A_Q |
Fairchild Semiconductor |
MOSFET Single P-Ch FET Enhancement Mode |
Data Sheet |
Negotiable |
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