SI2301BDS

P-Channel MOSFET, -20 V, ±3.2 A, 1.7 W, SI2301BDS, SOT23-3

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Price:: US $0.06~0.20 / piece [Get Latest Price]

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PartNumber:: SI2301BDS

Brand:: Vishay Siliconix - vishay | Pack: SOT | D/C: 11+

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Products Upload time: 2012-04-27

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Part Number:SI2301BDS
US $0.06 - 0.20
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Product Summary

The SI2301BDS is a P-Channel 2.5-V (G-S) MOSFET.

Parametrics

SI2301BDS absolute maximum ratings: (1)Drain-Source Voltage VDS: -20 V; (2)Gate-Source Voltage VGS: ±8 V; (3)Continuous Drain Current (TJ = 175℃) TA = 25℃ ID: ±3.7 A; TA = 70℃ ID: ±3.2 A; (4)Pulsed Drain Current IDM: 25 A; (5)Continuous Source Current (Diode Conduction) IS: 2 A; (6)Maximum Power Dissipation TA = 25℃ PD: 2.4 W; TA = 70℃ PD: 1.7 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 175 ℃.

Features

SI2301BDS specifications: (1)Drain-Source Breakdown Voltage V(BR)DSS: min=-20 V; (2)Gate-Threshold Voltage VGS(th): min=-0.45 V, max=-0.95 V; (3)Gate-Body Leakage IGSS: ±100 nA; (4)Zero Gate Voltage Drain Current IDSS: max=-1μA; (5)VDS = -20 V, VGS = 0 V, TJ = 55℃; (6)On State Drain Currenta ID(on): min=-6A; (7)Drain Source On Resistance rDS(on): typ=0.080 Ω, max=0.100 Ω; (8)Forward Transconductance gfs: typ=6.5 S; (9)Diode Forward Voltage VSD: typ=-0.80 V, max=-1.2 V.