(Hong Kong)
Product Summary
The SI2301BDS-T1 is a P-Channel 2.5-V (G-S) MOSFET.
Parametrics
SI2301BDS-T1 absolute maximum ratings: (1)Drain-Source Voltage VDS: -20 V; (2)Gate-Source Voltage VGS: ±8 V; (3)Continuous Drain Current (TJ = 175℃) TA = 25℃ ID: ±3.7 A; TA = 70℃ ID: ±3.2 A; (4)Pulsed Drain Current IDM: 25 A; (5)Continuous Source Current (Diode Conduction) IS: 2 A; (6)Maximum Power Dissipation TA = 25℃ PD: 2.4 W; TA = 70℃ PD: 1.7 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 175 ℃.
Features
SI2301BDS-T1 specifications: (1)Drain-Source Breakdown Voltage V(BR)DSS: min=-20 V; (2)Gate-Threshold Voltage VGS(th): min=-0.45 V, max=-0.95 V; (3)Gate-Body Leakage IGSS: ±100 nA; (4)Zero Gate Voltage Drain Current IDSS: max=-1μA; (5)VDS = -20 V, VGS = 0 V, TJ = 55℃; (6)On State Drain Currenta ID(on): min=-6A; (7)Drain Source On Resistance rDS(on): typ=0.080 Ω, max=0.100 Ω; (8)Forward Transconductance gfs: typ=6.5 S; (9)Diode Forward Voltage VSD: typ=-0.80 V, max=-1.2 V.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 SI2301BDS-T1 |
Vishay/Siliconix |
MOSFET 20V 2.4A 0.7W |
Data Sheet |
Negotiable |
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SI2301BDS-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 2.0A 0.9W |
Data Sheet |
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SI2301BDS-T1-GE3 |
Vishay/Siliconix |
MOSFET 20V 2.4A 0.9W 100mohm @ 4.5V |
Data Sheet |
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