Product Summary
The KSC5042F is an NPN Triple Diffused Planar Silicon Transistor.
Parametrics
KSC5042F absolute maximum ratings: (1)VCBO Collector-Base Voltage: 1500 V; (2)VCEO Collector-Emitter Voltage: 900 V; (3)VEBO Emitter-Base Voltage: 5 V; (4)IC Collector Current (DC): 100 mA; (5)ICP Collector Current (Pulse): 300 mA; (6)PC Collector Dissipation (TC=25℃): 6 W; (7)TJ Junction Temperature: 150 ℃; (8)TSTG Storage Temperature: - 55 ~ 150 ℃.
Features
KSC5042F features: (1)High Collector-Emitter Breakdown Voltage : BVCEO=900V; (2)Small Cob =2.8pF (Typ.); (3)Wide S.O.A; (4)High reliability.
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() KSC5042FTU |
![]() Fairchild Semiconductor |
![]() Transistors Bipolar (BJT) NPN Triple Diffused Planar Silicon |
![]() Data Sheet |
![]() Negotiable |
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Image | Part No | Mfg | Description | ![]() |
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![]() KSC5019 |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() KSC5019MBU |
![]() Fairchild Semiconductor |
![]() Transistors Bipolar (BJT) NPN Si Transistor Epitaxial |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() KSC5019MTA |
![]() Fairchild Semiconductor |
![]() Transistors Bipolar (BJT) NPN Epitaxial Transistor |
![]() Data Sheet |
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![]() |
![]() KSC5019NTA |
![]() Fairchild Semiconductor |
![]() Transistors Bipolar (BJT) NPN/10V/2A/Low(sat) |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() KSC5020 |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() KSC5020R |
![]() Fairchild Semiconductor |
![]() Transistors Bipolar (BJT) |
![]() Data Sheet |
![]() Negotiable |
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