Product Summary

The MRF141 is an RF power FET.

Parametrics

MRF141 absolute maximum ratings: (1)drain-source voltage: 65V; (2)drain-gate voltage: 65V; (3)gate-source voltage: ±40V; (4)drain current: 16A; (5)total device dissipation: 300W; (6)storage temperature range: -65 to 150℃; (7)operating junction temperature: 200℃.

Features

MRF141 features: (1)Guaranteed performance at 30 MHz, 28V: Output power: 150W ;Gain: 8dB (22dB Typ.) ;Efficiency: 40% ; (2)Typical Performance at 175MHz, 50V: Output Power: 150 W ;Gain: 13 dB ; (3)Low thermal resistance ; (4)Ruggedness tested at rated output power ; (5)Nitride passivated die for enhanced reliability.

Diagrams

MRF141 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF141
MRF141
Advanced Semiconductor, Inc.
Transistors RF MOSFET Power RF Transistor
Data Sheet
0-1: $44.63
1-10: $40.95
10-25: $36.75
25-50: $32.55
MRF141G
MRF141G
M/A-COM Technology Solutions
Transistors RF MOSFET Power 5-175MHz 300Watts 28Volt Gain 12dB
Data Sheet
0-1: $113.36
1-10: $109.58
10-25: $105.80
25-50: $102.03