(Hong Kong)
Product Summary
The MRF157 is a broadband RF power MOSFET. It is designed primarily for linear large signal output stages in the 2 to 100MHz frequency range.
Parametrics
MRF157 absolute maximum rating: (1)drain-source voltage: 125Vdc; (2)drain gate voltage: 125V; (3)gate-source voltage: 40V; (4)drain current-continuous: 60A; (5)total device dissipation: 1350W; (6)stoage temperature range: -65 to 150℃.
Features
MRF157 features: (1)Specified 50 volts, 30 MHz characteristics ; (2) Output power = 600 watts ; (3) Power gain = 21 dB (typ.) ; (4) Efficiency = 45% (typ.)
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
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 MRF157 |
M/A-COM Technology Solutions |
Transistors RF MOSFET Power 5-80MHz 600Watts 50Volt Gain 21dB |
Data Sheet |
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MRF1570FT1 |
Other |
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Data Sheet |
Negotiable |
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MRF1570T1 |
Other |
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Data Sheet |
Negotiable |
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MRF1570NT1 |
Freescale Semiconductor |
Transistors RF MOSFET Power RF LDMOS TO272-6N FORMED |
Data Sheet |
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MRF1570FNT1 |
Freescale Semiconductor |
Transistors RF MOSFET Power RF LDMOS TO272-6N FLAT |
Data Sheet |
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