(Hong Kong)
Product Summary
The MRF182 is a lateral N-channel broadband RF power MOSFET.
Parametrics
MRF182 absolute maximum ratings: (1)drain-source voltage: 65V; (2)gate-source voltage: ±20V; (3)total device dissipation: 74W; (4)storage temperature range: -65 to 150℃; (5)operating junction temperature: 200℃.
Features
MRF182 features: (1)High Gain, Rugged Device ; (2)Broadband Performance from HF to 1 GHz ; (3)Bottom Side Source Eliminates DC Isolators, Reducing Common ;(4)Mode Inductances.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 MRF182 |
Other |
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Data Sheet |
Negotiable |
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MRF182R1 |
Other |
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Data Sheet |
Negotiable |
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MRF182SR1 |
Other |
|
Data Sheet |
Negotiable |
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MRF182S |
Other |
|
Data Sheet |
Negotiable |
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