Product Summary

The MRF182 is a lateral N-channel broadband RF power MOSFET.

Parametrics

MRF182 absolute maximum ratings: (1)drain-source voltage: 65V; (2)gate-source voltage: ±20V; (3)total device dissipation: 74W; (4)storage temperature range: -65 to 150℃; (5)operating junction temperature: 200℃.

Features

MRF182 features: (1)High Gain, Rugged Device ; (2)Broadband Performance from HF to 1 GHz ; (3)Bottom Side Source Eliminates DC Isolators, Reducing Common ;(4)Mode Inductances.

Diagrams

MRF182 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
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MRF182
MRF182

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Data Sheet

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MRF182R1
MRF182R1

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Data Sheet

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MRF182S
MRF182S

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MRF182SR1
MRF182SR1

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Data Sheet

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