Product Summary

The MRF182 is a lateral N-channel broadband RF power MOSFET.

Parametrics

MRF182 absolute maximum ratings: (1)drain-source voltage: 65V; (2)gate-source voltage: ±20V; (3)total device dissipation: 74W; (4)storage temperature range: -65 to 150℃; (5)operating junction temperature: 200℃.

Features

MRF182 features: (1)High Gain, Rugged Device ; (2)Broadband Performance from HF to 1 GHz ; (3)Bottom Side Source Eliminates DC Isolators, Reducing Common ;(4)Mode Inductances.

Diagrams

MRF182 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF182SR1
MRF182SR1

Other


Data Sheet

Negotiable 
MRF182S
MRF182S

Other


Data Sheet

Negotiable 
MRF182R1
MRF182R1

Other


Data Sheet

Negotiable 
MRF182
MRF182

Other


Data Sheet

Negotiable