Product Summary

The MRF19060 is a RF Power Field Effect Transistor. It is designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz.

Parametrics

MRF19060 absolute maximum ratings: (1)Drain-Source Voltage:-0.5Vdc to +65Vdc; (2)Gate-Source Voltage:-0.5Vdc to +15Vdc; (3)Total Device Dissipation:@ TC = 25℃:180W, Derate above 25℃:1.03W/℃; (4)Storage Temperature Range:- 65℃ to +150℃; (5)Case Operating Temperature:150℃; (6)Operating Junction Temperature:200℃.

Features

MRF19060 features: (1)Internally Matched for Ease of Use; (2)High Gain, High Efficiency and High Linearity; (3)Integrated ESD Protection; (4)Designed for Maximum Gain and Insertion Phase Flatness; (5)Excellent Thermal Stability; (6)Characterized with Series Equivalent Large-Signal Impedance Parameters; (7)Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal; (8)RoHS Compliant; (9)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.

Diagrams

MRF19060 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
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MRF19060
MRF19060

Other


Data Sheet

Negotiable 
MRF19060R3
MRF19060R3

Other


Data Sheet

Negotiable 
MRF19060S
MRF19060S

Other


Data Sheet

Negotiable 
MRF19060SR
MRF19060SR

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Data Sheet

Negotiable 
MRF19060SR3
MRF19060SR3

Other


Data Sheet

Negotiable