(Hong Kong)
Product Summary
The MRF19060 is a RF Power Field Effect Transistor. It is designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz.
Parametrics
MRF19060 absolute maximum ratings: (1)Drain-Source Voltage:-0.5Vdc to +65Vdc; (2)Gate-Source Voltage:-0.5Vdc to +15Vdc; (3)Total Device Dissipation:@ TC = 25℃:180W, Derate above 25℃:1.03W/℃; (4)Storage Temperature Range:- 65℃ to +150℃; (5)Case Operating Temperature:150℃; (6)Operating Junction Temperature:200℃.
Features
MRF19060 features: (1)Internally Matched for Ease of Use; (2)High Gain, High Efficiency and High Linearity; (3)Integrated ESD Protection; (4)Designed for Maximum Gain and Insertion Phase Flatness; (5)Excellent Thermal Stability; (6)Characterized with Series Equivalent Large-Signal Impedance Parameters; (7)Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal; (8)RoHS Compliant; (9)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF19060S |
Other |
|
Data Sheet |
Negotiable |
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MRF19060SR |
Other |
|
Data Sheet |
Negotiable |
|
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MRF19060SR3 |
Other |
|
Data Sheet |
Negotiable |
|
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|
MRF19060R3 |
Other |
|
Data Sheet |
Negotiable |
|
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|
MRF19060 |
Other |
|
Data Sheet |
Negotiable |
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