(Hong Kong)
Product Summary
The MRF648 is an NPN silicon rf power transistor. It is designed for 12.5 V UHF large signal amplifier applications up to 512 MHz.
Parametrics
MRF648 absolute maximum ratings: (1)IC: 11 A; (2)VCBO: 36 V; (3)VCEO: 16 V; (4)VEBO: 4.0 V; (5)PDISS: 175 W @ TC = 25 ℃; (6)TJ: -65 ℃ to +200 ℃; (7)TSTG: -65 ℃ to +150 ℃; (8)θJC: 1.0 ℃/W.
Features
MRF648 features: (1)Internal Input Matching Network; (2)PG = 4.4 dB at 60 W/470 MHz; (3)Omnigold Metalization System.
Diagrams
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MRF630 |
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MRF6414 |
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MRF650 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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