(Hong Kong)
Product Summary
The PTF10021 is a field effect transistor. It is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. It is rated at 30 watts power output. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
Parametrics
PTF10021 absolute maximum ratings: (1)drain-source voltage: 65V; (2)gate-source voltage: ±20V; (3)operating junction: 200℃; (4)total device dissipation: 105W; (5)storage temperature range: -40 to 150℃; (6)thermal resistance: 1.65℃/W.
Features
PTF10021 features: (1)internally m atched; (2)Performance at 1.5 GHz, 28 Volts :Output Power = 30 Watts Min ; Power Gain = 13 dB Typ ; Efficiency = 48% Typ (3) Full Gold Metallization ; (4) Silicon Nitride Passivated ; (5) Excellent Thermal Stability ; (6) 100% Lot Traceability.
Diagrams
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 PTF10009SP |
TriQuint Semiconductor |
RF Amplifier RF LDMOS Transistor |
Data Sheet |
Negotiable |
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PTF10041 |
TriQuint Semiconductor |
RF Amplifier RF LDMOS Transistor |
Data Sheet |
Negotiable |
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PTF10043 |
TriQuint Semiconductor |
RF Amplifier RF LDMOS Transistor |
Data Sheet |
Negotiable |
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PTF10052 |
TriQuint Semiconductor |
RF Amplifier RF LDMOS Transistor |
Data Sheet |
Negotiable |
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PTF10053 |
TriQuint Semiconductor |
RF Amplifier RF LDMOS Transistor |
Data Sheet |
Negotiable |
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PTF10107 |
TriQuint Semiconductor |
RF Amplifier RF LDMOS Transistor |
Data Sheet |
Negotiable |
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