Product Summary
The BC857BWT1G is a general purpose transistor. These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications.
Parametrics
BC857BWT1G absolute maximum ratings: (1)collector-emitter voltage: -30V; (2)collector-base voltage: -30V; (3)emitter-base voltage: -5V; (4)collector current-continuous: -100mA.
Features
BC857BWT1G features: (1)total device dissipation: 150mW; (2)thermal resistance: 833℃/W; (3)junction and storage temperature: -55 to 150℃.
Diagrams
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![]() BC857BWT1G |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 100mA 50V PNP |
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