(Hong Kong)
Product Summary
The EP1C3T100C8N is a field programmable gate array which is based on a 1.5-V, 0.13-μm, all-layer copper SRAM process, with densities up to 20,060 logic elements (LEs) and up to 288 Kbits of RAM. With features like phaselocked loops (PLLs) for clocking and a dedicated double data rate (DDR) interface to meet DDR SDRAM and fast cycle RAM (FCRAM) memory requirements, the EP1C3T100C8N is a cost-effective solution for data-path applications.
Parametrics
EP1C3T100C8N absolute maximum ratings: (1)Supply voltage With respect to ground: –0.5 to 2.4 V; (2)DC input voltage: –0.5 to 4.6 V; (3)DC output current, per pin: –25 to 25 mA; (4)Storage temperature No bias: –65 to 150 ℃; (5)Ambient temperature Under bias: –65 to 135 ℃; (6)Junction temperature BGA packages under bias: 135 ℃.
Features
EP1C3T100C8N features: (1)2,910 to 20,060 LEs; (2)Up to 294,912 RAM bits (36,864 bytes); (3)Supports configuration through low-cost serial configuration device; (4)Support for LVTTL, LVCMOS, SSTL-2, and SSTL-3 I/O standards; (5)Support for 66-MHz, 32-bit PCI standard; (6)Low speed (311 Mbps) LVDS I/O support; (7)Up to two PLLs per device provide clock multiplication and phase shifting; (8)Up to eight global clock lines with six clock resources available per logic array block (LAB) row; (9)Support for external memory, including DDR SDRAM (133 MHz), FCRAM, and single data rate (SDR) SDRAM.
Diagrams
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IC CYCLONE FPGA 2910 LE 100-TQFP |
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