(Hong Kong)
Product Summary
The BSS123LT1 is a power MOSFET.
Parametrics
BSS123LT1 absolute maximum ratings: (1)drain-source voltage: 100V; (2)gate-source voltage: ±20V; (3)drain current: 0.17A.
Features
BSS123LT1 features: (1)AEC-Q101 qualified and PPAP capable; (2)these devices are Pb-free are RoHS compliant.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 BSS123LT1 |
ON Semiconductor |
MOSFET 100V 170mA N-Channel |
Data Sheet |
Negotiable |
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BSS123LT1G |
ON Semiconductor |
MOSFET 100V 170mA N-Channel |
Data Sheet |
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