Product Summary
The IRFZ44NPBF is a Power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRFZ44NPBF absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V: 49 A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 35 A; (3)Pulsed Drain Current: 160 A; (4)PD @TC = 25℃, Power Dissipation: 94 W; (5)Linear Derating Factor: 0.63 W/℃; (6)Gate-to-Source Voltage: ±20 V; (7)Avalanche Current: 25 A; (8)epetitive Avalanche Energy: 9.4 mJ; (9)Peak Diode Recovery dv/dt: 5.0 V/ns; (10)Operating Junction and Storage Temperature Range: -55 to + 175 ℃; (11)Soldering Temperature, for 10 seconds: 300 (1.6mm from case ) ℃.
Features
IRFZ44NPBF features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated; (7)Lead-Free.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRFZ44NPBF |
International Rectifier |
MOSFET MOSFT 55V 41A 17.5mOhm 42nC |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRFZ10 |
Vishay/Siliconix |
MOSFET N-Chan 60V 10 Amp |
Data Sheet |
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IRFZ10, SiHFZ10 |
Other |
Data Sheet |
Negotiable |
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IRFZ10PBF |
Vishay/Siliconix |
MOSFET N-Chan 60V 10 Amp |
Data Sheet |
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IRFZ14 |
Vishay/Siliconix |
MOSFET N-Chan 60V 10 Amp |
Data Sheet |
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IRFZ14, SiHFZ14 |
Other |
Data Sheet |
Negotiable |
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IRFZ14L |
MOSFET N-CH 60V 10A TO-262 |
Data Sheet |
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