(Hong Kong)
Product Summary
The MRF174 is a RF MOSFET. Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.
Parametrics
MRF174 absolute maximum ratings: (1)Drain-source voltage, VDSS: 65V; (2)Gate-source voltage, VGS: ±40V; (3)Drain current-continous, ID: 13A; (4)Total device disspation, PD: 270W; (5)Storage temperature range, TSTG: -65 to +150℃; (6)Operating junction temperature, TJ: 200℃.
Features
MRF174 features: (1)Guaranteed performance at 150 MHz, 28 Vdc, Output power = 125 W; Minimum gain = 9.0 dB; (2)Efficiency = 50% (min.); (3)Excellent thermal stability, ideally suited for Class A operation; (4)Facilitates manual gain control, ALC and modulation techniques; (5)100% tested for load mismatch at all phase angles with 30:1 VSWR; (6)Low noise figure - 3.0 dB typ. at 2.0 A, 150 MHz.
Diagrams
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 MRF174 |
Advanced Semiconductor, Inc. |
Transistors RF MOSFET Power RF Transistor |
Data Sheet |
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MRF1.6/5.6 |
Other |
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Data Sheet |
Negotiable |
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MRF1.6/5.6-AP-2.5C |
Hirose Connector |
RF Connectors Obsolete |
Data Sheet |
Negotiable |
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MRF1.6/5.6-AP-59U |
Hirose Connector |
RF Connectors Obsolete |
Data Sheet |
Negotiable |
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MRF1.6/5.6-BCUPA |
Hirose Connector |
RF Connectors Obsolete |
Data Sheet |
Negotiable |
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MRF1.6/5.6-LPJ-179U |
Hirose Connector |
RF Connectors Obsolete |
Data Sheet |
Negotiable |
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MRF1.6/5.6-LR-PC-1 |
Hirose Connector |
RF Connectors Obsolete |
Data Sheet |
Negotiable |
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