(Hong Kong)
Product Summary
The PDMB100B12C is an IGBT module.
Parametrics
PDMB100B12C absolute maximum ratings: (1)Collector-Emitter Voltage: 1200V; (2)Gate-Emitter Voltage: +/-20V; (3)Collector Power Dissipation: 500W; (4)Junction Temperature Range: -40 to +150℃; (5)Storage Temperature Range: -40 to +125℃; (6)Isolation Voltage Terminal to Base AC,1 min.): 2500V.
Features
PDMB100B12C features: (1)Collector-Emitter Cut-Off Current, ICES, VCE=1200V,VGE=0V: 2.0 mA; (2)Gate-Emitter Leakage Current, IGES, VGE=+/- 20V,VCE=0V: 1.0 μA; (3)Collector-Emitter Saturation Voltage, VCE(sat), IC=100A,VGE=15V: 1.9 to 2.4 V; (4)Gate-Emitter Threshold Voltage, VGE(th), VCE=5V,IC=100mA: 4.0 to 8.0 V; (5)Input Capacitance, Cies, VCE=10V,VGE=0V,f=1MHz: 8300pF; (6)Rise Time, tr: 0.25 to 0.45μs; (7)Turn-on Time, ton: 0.40 to 0.70μs; (8)Switching Time Fall Time, tf: 0.25 to 0.35μs; (9)Turn-off Time toff: 0.80 to 1.10μs.
Diagrams
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Pricing (USD) |
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 PDMB100B12C |
Other |
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Data Sheet |
Negotiable |
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PDMB100B12C2 |
Other |
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Data Sheet |
Negotiable |
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