Product Summary
The SI4565DY-T1-E3 is a P-channel 40V MOSFET. Its applications include CCFL inverter.
Parametrics
SI4565DY-T1-E3 absolute maximum ratings: (1)drain-source voltage: -40V; (2)gate-source voltage: 16V; (3)continuous drain current: -3.3A; (4)pulsed drain current: 30A; (5)maximum power dissipation: 1.1W; (6)operating junction and storage temperature range: -55 to 150℃.
Features
SI4565DY-T1-E3 features: (1)TrenchFET Power MOSFET; (2)100% Rg Tested; (3)UIS Tested.
Diagrams
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![]() Si4500BDY |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() SI4500BDY-T1 |
![]() Vishay/Siliconix |
![]() MOSFET 20V 9.1/5.3A 1.3W |
![]() Data Sheet |
![]() Negotiable |
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![]() SI4500BDY-T1-E3 |
![]() Vishay/Siliconix |
![]() MOSFET 20V 7/4.5A 2.5W |
![]() Data Sheet |
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![]() |
![]() SI4500DY-E3 |
![]() Vishay/Siliconix |
![]() MOSFET 20V 7/4.5A 2.5W |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() SI4500DY-T1 |
![]() Vishay/Siliconix |
![]() MOSFET 20V 7/4.5A 2.5W |
![]() Data Sheet |
![]() Negotiable |
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![]() Si4501ADY |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
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