Product Summary

The TOSHIBA TLP521-4 consist of a photo-transistor ;optically coupled to a gallium arse nide infrared emitting diode. ; The TLP521-4 provides four isolated channels in a ;plastic DIP package. ;

Parametrics

(1) Collector-emitter voltage: 55 V (min) ; (2) Current transfer ratio: 50% (min) ; Rank GB: 100% (min) ; (3) Isolation voltage: 2500 Vrms (min) ; (4) UL recognized ; made in Japan: UL1577, file No. E67349 ; made in Thailand: UL1577, file No. E152349

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
TLP521-4
TLP521-4

Other


Data Sheet

Negotiable 
TLP521-4GB
TLP521-4GB

Other


Data Sheet

Negotiable