Product Summary
The TOSHIBA TLP521-4 consist of a photo-transistor ;optically coupled to a gallium arse nide infrared emitting diode. ; The TLP521-4 provides four isolated channels in a ;plastic DIP package. ;
Parametrics
(1) Collector-emitter voltage: 55 V (min) ; (2) Current transfer ratio: 50% (min) ; Rank GB: 100% (min) ; (3) Isolation voltage: 2500 Vrms (min) ; (4) UL recognized ; made in Japan: UL1577, file No. E67349 ; made in Thailand: UL1577, file No. E152349
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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TLP521-4 |
Other |
Data Sheet |
Negotiable |
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TLP521-4GB |
Other |
Data Sheet |
Negotiable |
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