(Hong Kong)
Product Summary
The FDS6912A is a dual N-Channel, logic level, power Trench MOSFET. They are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Parametrics
FDS6912A absolute maximum ratings: (1)drain-source voltage: 30V; (2)gate-source voltage: ±20V; (3)drain current: 6A; (4)power dissipation: 2W; (5)operating and storage temperature range: -55 to 150℃.
Features
FDS6912A features: (1)6 A, 30 V. RDS(ON)= 0.028Ω @ VGS = 10 V ;RDS(ON)= 0.035Ω @VGS = 4.5 V.; (2)Fast switching speed.; (3)Low gate charge (typical 9 nC).; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FDS6912A |
Fairchild Semiconductor |
MOSFET SO-8 DUAL N-CH 30V |
Data Sheet |
Negotiable |
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FDS6912A_Q |
Fairchild Semiconductor |
MOSFET Dual N-Channel 30V |
Data Sheet |
Negotiable |
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