Product Summary
The PMV65XP is P-channel trenchMOS. It is in a plastic package using TrenchMOStm technology. Its applications include low power DC-to-DC converters, load switching, battery management, battery powered portable equipment.
Parametrics
PMV65XP absolute maximum ratings: (1)drain-source voltage: -20V; (2)gate-source voltage: 12V; (3)drain current: -4.3A; (4)peak drain current: -16A; (5)total power dissipation: 480mW.
Features
PMV65XP features: (1)Low threshold voltage ; (2)Low on-state resistance.
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() PMV65XP,215 |
![]() NXP Semiconductors |
![]() MOSFET P-CH TRENCH 20V |
![]() Data Sheet |
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![]() PMV65XP |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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