Product Summary
The SD2933 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 50 V DC large signal applications up to 150MHz
Parametrics
SD2933 absolute maximum ratings: (1)Drain Source Volatage :125 V; (2)Drain-Gate Voltage (RGS =1MΩ) :125 V; (3)Gate-Source Voltage: ±20 V; (4)Drain Current: 40 A; (5)Power Dissipation :648 W; (6)Max. Operating Junction Temperature :200°C; (7)Storage Temperature :-65 to 150°C.
Features
SD2933 features: (1)gold metallization; (2)excellent thermal stability; (3)common source configuration; (4)P OUT= 300 W min. with 20 dB gain @ 30MHz; (5)thermally enhanced packaging.
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() SD2933 |
![]() STMicroelectronics |
![]() Transistors RF MOSFET Power N-Ch 125 Volt 40A |
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![]() SD2933-03 |
![]() STMicroelectronics |
![]() Transistors RF MOSFET Power RF Power Transistor LdmoST N-ch Plastic |
![]() Data Sheet |
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![]() SD2933-03W |
![]() STMicroelectronics |
![]() Transistors RF MOSFET Power HF/VHF/UHF RF N-Ch 300W 15dB 175MHz |
![]() Data Sheet |
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![]() SD2933W |
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![]() IC TRANS RF HF/VHF/UHF |
![]() Data Sheet |
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